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AIDA GELINA BRIKEN nToF CRIB ISOLDE CIRCE nTOFCapture DESPEC DTAS EDI_PSA 179Ta CARME StellarModelling DCF K40

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Entry time:	Fri Apr 4 06:33:28 2025
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Offline analysis of S505 data files R3_150 first WR ts First timestamp of R3_150 0x16FB3CE72ED53CB6 Epoch converter says ... GMT: Thursday, June 23, 2022 11:37:31.609 AM Your time zone: Thursday, June 23, 2022 12:37:31.609 PM GMT+01:00 DST last WR ts First timestamp of R3_151 0x16FB3D3042B9E8E6 Epoch converter says ... GMT: Thursday, June 23, 2022 11:42:45.475 AM Your time zone: Thursday, June 23, 2022 12:42:45.475 PM GMT+01:00 DST Analysis of data file R3_150 - attachment 1 max time averaged deadtime FEE64 #1 (aida02) 18.3% FEE64 configuration FEE64 a b d c a b c d DSSSD#1 3 4 1 2 DSSSD#2 7 8 5 6 n+n Ohmic FEE64s 2, 4, 6, 8 Data analysis assumes - all LEC ADC data channels with valid ADC offset included (474 of 512 channels) LEC calibration ADC offset only - no clustering - no multiplex timestamp correction - no p+n junction side - n+n Ohmic side correlation time gates - FEE64 not DSSSD strip ordering - hardware - slow comparator setting p+n junction FEE64s 100keV, n+n Ohmic FEE64s 100keV - LEC energy difference +/-168keV - HEC energy difference +/- 1.68GeV - valid LEC events DSSSD #1 p+n junction side multiplicity = 1 and n+n Ohmic side multiplicity = 1 DSSSD #2 p+n junction side multiplicity = 1 and n+n Ohmic side multiplicity = 1 151keV < LEC energy < 1008keV to select candidate beta events and veto higher energy events e.g. light ions standalone analysis of AIDA data, no downstream veto detector - valid HEC events p+n junction side multiplicity > 0 and n+n Ohmic side multiplicity > 0 (x,y) strips corresponding to maximum energy p+n junction and n+n Ohmic side HEC - HEC veto p+n junction side multiplicity > 0 or n+n Ohmic side multiplicity > 0 - per pixel implant-decay correlations - end of event difference in WR timestamp between successive ADC data items > 2500 or difference in first and last WR timestamp of event < 33us Attachment 2 per FEE64 LEC data rate (Hz) 268ms/channel Attachment 3 per FEE64 LEC data rate (Hz) 268ms/channel: 150keV < energy < 1500keV Attachment 22 per FEE64 LEC data rate (Hz) 268ms/channel: energy > 1500keV - observe high instantaneous rate on spill - rate dominated by low energy (<1500keV) events - rate of higher energy events dominated by on spill events i.e. light ions as expected - significant deadtime on spill for n+n Omic FEE64 aida02, low deadtime off spill - deadtime low/zero for all other FEE64s on/off spill Attachment 4 per FEE64 HEC data rate (Hz) 268ms/channel Attachment 5 per FEE64 HEC data rate (Hz) 268ms/channel: 100MeV < energy < 1000MeV Attachment 6 per FEE64 HEC data rate (Hz) 268ms/channel: energy > 1000MeV - all HEC events on spill as expected - significant deadtime on spill for n+n Ohmic FEE64 aida02, low deadtime off spill - deadtime low/zero for all other FEE64s on/off spill Attachment 7 per DSSSD decay and implant rate (Hz) 268ms/channel Attachment 8 log scale yellow - FEE64 aida01 LEC data rate (Hz) 268ms/channel red - FEE64 aida01 HEC data rate (Hz) 268ms/channel blue - DSSSD #1 decay rate (Hz) 268ms/channel green - DSSSD #1 implant rate (Hz) 268ms/channel Attachment 9 log scale yellow - FEE64 aida02 LEC data rate (Hz) 268ms/channel red - FEE64 aida02 HEC data rate (Hz) 268ms/channel blue - DSSSD #1 decay rate (Hz) 268ms/channel green - DSSSD #1 implant rate (Hz) 268ms/channel Attachment 10 log scale yellow - FEE64 aida05 LEC data rate (Hz) 268ms/channel red - FEE64 aida05 HEC data rate (Hz) 268ms/channel blue - DSSSD #2 decay rate (Hz) 268ms/channel green - DSSSD #2 implant rate (Hz) 268ms/channel Attachment 11 per DSSSD LEC m_p versus m_n Attachment 12 per DSSSD LEC x versus y Attachment 13 per DSSSD LEC p+n junction versus n+n Ohmic energy - x-axis & y-axis 20keV/channel Attachment 14 per DSSSD HEC m_p versus m_n Attachment 15 per DSSSD HEC x versus y Attachment 16 per DSSSD HEC p+n junction versus n+n Ohmic energy - x-axis & y-axis 20MeV/channel Attachment 17 HEC DSSSD#2 p+n junction versus DSSSD#1 p+n junction energy - x-axis & y-axis 20MeV/channel to identify which ions stop in DSSSD#2 (z_loc=2) Attachment 18 decay & implant dx versus dy Attachment 19 LEC DSSSD#2 p+n junction versus DSSSD#1 p+n junction energy - x-axis & y-axis 20keV/channel Attachment 20 per DSSSD decay & implant dt (2us/channel) Attachment 21 per DSSSD decay dt (2us/channel) versus p+n junctionj - n+n Ohmic energy difference (20keV/channel) Summary - high instantaneous data rates on spill - significant deadtime FEE64 #2 on spill magnitude, structure, position of DSSSD#1 decay rate variations differs from FEE64 #2 deadtime - events merging? - all other FEE64s OK on/off spill Encoding: HTML ELCode plain Suppress Email notification

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