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AIDA GELINA BRIKEN nToF CRIB ISOLDE CIRCE nTOFCapture DESPEC DTAS EDI_PSA 179Ta CARME StellarModelling DCF K40

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Entry time:	Thu Aug 7 16:34:05 2025
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> Offline analysis of S505 data files R3_150 > > first WR ts > First timestamp of R3_150 0x16FB3CE72ED53CB6 > > Epoch converter says ... > > GMT: Thursday, June 23, 2022 11:37:31.609 AM > Your time zone: Thursday, June 23, 2022 12:37:31.609 PM GMT+01:00 DST > > last WR ts > First timestamp of R3_151 0x16FB3D3042B9E8E6 > > Epoch converter says ... > > GMT: Thursday, June 23, 2022 11:42:45.475 AM > Your time zone: Thursday, June 23, 2022 12:42:45.475 PM GMT+01:00 DST > > Analysis of data file R3_150 - attachment 1 > max time averaged deadtime FEE64 #1 (aida02) 18.3% > > > > FEE64 configuration > > FEE64 a > b d > c > > a b c d > DSSSD#1 3 4 1 2 > DSSSD#2 7 8 5 6 > > n+n Ohmic FEE64s 2, 4, 6, 8 > > Data analysis assumes > > - all LEC ADC data channels with valid ADC offset included (474 of 512 channels) > LEC calibration ADC offset only > > - no clustering > > - no multiplex timestamp correction > > - no p+n junction side - n+n Ohmic side correlation time gates > > - FEE64 not DSSSD strip ordering > > - hardware - slow comparator setting p+n junction FEE64s 100keV, n+n Ohmic FEE64s 100keV > > - LEC energy difference +/-168keV > > - HEC energy difference +/- 1.68GeV > > - valid LEC events > > DSSSD #1 > p+n junction side multiplicity = 1 and n+n Ohmic side multiplicity = 1 > DSSSD #2 > p+n junction side multiplicity = 1 and n+n Ohmic side multiplicity = 1 > > 151keV < LEC energy < 1008keV > to select candidate beta events and veto higher energy events e.g. light ions > standalone analysis of AIDA data, no downstream veto detector > > - valid HEC events > p+n junction side multiplicity > 0 and n+n Ohmic side multiplicity > 0 > > (x,y) strips corresponding to maximum energy > p+n junction and n+n Ohmic side HEC > > - HEC veto > p+n junction side multiplicity > 0 or n+n Ohmic side multiplicity > 0 > > - per pixel implant-decay correlations > > - end of event > difference in WR timestamp between successive ADC data items > 2500 or difference in first and last WR timestamp of event < 33us > > > Attachment 2 per FEE64 LEC data rate (Hz) 268ms/channel > Attachment 3 per FEE64 LEC data rate (Hz) 268ms/channel: 150keV < energy < 1500keV > Attachment 22 per FEE64 LEC data rate (Hz) 268ms/channel: energy > 1500keV > > - observe high instantaneous rate on spill > - rate dominated by low energy (<1500keV) events > - rate of higher energy events dominated by on spill events i.e. light ions as expected > - significant deadtime on spill for n+n Omic FEE64 aida02, low deadtime off spill > - deadtime low/zero for all other FEE64s on/off spill > > Attachment 4 per FEE64 HEC data rate (Hz) 268ms/channel > Attachment 5 per FEE64 HEC data rate (Hz) 268ms/channel: 100MeV < energy < 1000MeV > Attachment 6 per FEE64 HEC data rate (Hz) 268ms/channel: energy > 1000MeV > > - all HEC events on spill as expected > - significant deadtime on spill for n+n Ohmic FEE64 aida02, low deadtime off spill > - deadtime low/zero for all other FEE64s on/off spill > > > Attachment 7 per DSSSD decay and implant rate (Hz) 268ms/channel > > Attachment 8 log scale > yellow - FEE64 aida01 LEC data rate (Hz) 268ms/channel > red - FEE64 aida01 HEC data rate (Hz) 268ms/channel > blue - DSSSD #1 decay rate (Hz) 268ms/channel > green - DSSSD #1 implant rate (Hz) 268ms/channel > > Attachment 9 log scale > yellow - FEE64 aida02 LEC data rate (Hz) 268ms/channel > red - FEE64 aida02 HEC data rate (Hz) 268ms/channel > blue - DSSSD #1 decay rate (Hz) 268ms/channel > green - DSSSD #1 implant rate (Hz) 268ms/channel > > Attachment 10 log scale > yellow - FEE64 aida05 LEC data rate (Hz) 268ms/channel > red - FEE64 aida05 HEC data rate (Hz) 268ms/channel > blue - DSSSD #2 decay rate (Hz) 268ms/channel > green - DSSSD #2 implant rate (Hz) 268ms/channel > > > Attachment 11 per DSSSD LEC m_p versus m_n > > Attachment 12 per DSSSD LEC x versus y > > Attachment 13 per DSSSD LEC p+n junction versus n+n Ohmic energy - x-axis & y-axis 20keV/channel > > > Attachment 14 per DSSSD HEC m_p versus m_n > > Attachment 15 per DSSSD HEC x versus y > > Attachment 16 per DSSSD HEC p+n junction versus n+n Ohmic energy - x-axis & y-axis 20MeV/channel > > Attachment 17 HEC DSSSD#2 p+n junction versus DSSSD#1 p+n junction energy - x-axis & y-axis 20MeV/channel > to identify which ions stop in DSSSD#2 (z_loc=2) > > Attachment 18 decay & implant dx versus dy > > Attachment 19 LEC DSSSD#2 p+n junction versus DSSSD#1 p+n junction energy - x-axis & y-axis 20keV/channel > > Attachment 20 per DSSSD decay & implant dt (2us/channel) > > Attachment 21 per DSSSD decay dt (2us/channel) versus p+n junctionj - n+n Ohmic energy difference (20keV/channel) > > > Summary > > - high instantaneous data rates on spill > - significant deadtime FEE64 #2 on spill > magnitude, structure, position of DSSSD#1 decay rate variations differs from FEE64 #2 deadtime - events merging? > - all other FEE64s OK on/off spill Encoding: HTML ELCode plain Suppress Email notification

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