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AIDA GELINA BRIKEN nToF CRIB ISOLDE CIRCE nTOFCapture DESPEC DTAS EDI_PSA 179Ta CARME StellarModelling DCF K40

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Entry time:	Wed Mar 26 07:27:50 2025
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Analysis data files R4_351-396 Data file R4_351 first WR ts 0x17D7B4C72B0BA9C8 Converting hexadecimal timestamp to decimal: 1718040550378809900 Assuming that this timestamp is in nanoseconds (1 billionth of a second): GMT: Monday, June 10, 2024 5:29:10.378 PM Your time zone: Monday, June 10, 2024 6:29:10.378 PM GMT+01:00 DST Relative: 8 months ago Data file R4_396 first WR ts 0x17D7BE86408888E8 Converting hexadecimal timestamp to decimal: 1718051266682718500 Assuming that this timestamp is in nanoseconds (1 billionth of a second): GMT: Monday, June 10, 2024 8:27:46.682 PM Your time zone: Monday, June 10, 2024 9:27:46.682 PM GMT+01:00 DST Relative: 8 months ago Attachments 1-2 - analysis data files R4_351 and R4_396 max. time averaged deadtime FEE64 #7 (aida08) 1.7% and 1.7% respectively all other FEE64 deadtimes < 1% FEE64 configuration FEE64 a b c g h d e f a b c d e f g h DSSSD#1 15 3 12 9 1 5 2 4 DSSSD#2 11 7 16 10 14 13 6 8 n+n Ohmic FEE64s 2, 4, 6, 8 Data analysis assumes - all LEC ADC data channels with valid ADC offset included (1012 of 1024 channels) LEC calibration ADC offset only - no clustering - no multiplex timestamp correction - no p+n junction side - n+n Ohmic side correlation time gates - FEE64 not DSSSD strip ordering - hardware - slow comparator setting p+n junction FEE64s 100keV, n+n Ohmic FEE64s 150keV - LEC energy difference +/- 11200keV (wide open for first pass analysis) - HEC energy difference +/- 1.68GeV - valid LEC events p+n junction side multiplicity = 1 and n+n Ohmic side multiplicity = 1 LEC energy > 151keV to select candidate beta and alpha events - will include light ions standalone analysis of AIDA data, no downstream veto detector - valid HEC events p+n junction side multiplicity > 0 and n+n Ohmic side multiplicity > 0 (x,y) strips corresponding to maximum energy p+n junction and n+n Ohmic side HEC - HEC veto p+n junction side multiplicity > 0 or n+n Ohmic side multiplicity > 0 - per pixel implant-decay correlations - end of event difference in WR timestamp between successive ADC data items > 2500 and overall event length < 33us Number of events observed *** scaler # 1 count: 35941696 DSSSD#1 decay events LEC m_p = 1 and LEC m_n = 1, ADC data > 151.2keV and HEC m_p = HEC m_n = 0, ADC data > 151.2MeV *** scaler # 2 count: 31960753 DSSSD#2 decay events LEC m_p = 1 and LEC m_n = 1, ADC data > 151.2keV and HEC m_p = HEC m_n = 0, ADC data > 151.2MeV * scaler # 3 count: 1499844 DSSSD#1 implant events HEC m_p > 0 and HEC m_n > 0, ADC data > 151.2MeV * scaler # 4 count: 1297356 DSSSD#2 implant events HEC m_p > 0 and HEC m_n > 0, ADC data > 151.2MeV *** scaler # 5 count: 5446969 DSSSD#1 other events HEC m_p > 0 or HEC m_n > 0 and LEC m_p > 8 or LEC m_n > 8 *** scaler # 6 count: 75030747 DSSSD#2 other events HEC m_p > 0 or HEC m_n > 0 and LEC m_p > 8 or LEC m_n > 8 DSSSD#1 implant events x=m_p=0 ? y=m_n=0 ? DSSSD#2 implant events x=m_p=0 ? y=m_n=0 ? Attachments 3-6 - per FEE64 LEC data item rates 268ms/channel - common x and y scales - no conditions - 150keV < energy < 1500keV - energy > 1500keV Some deadtime observed on spill, none observed off spill. No significant variation in per FEE64 LEC data rates. Attachments 7-8 - per FEE64 LEC hit patterns - 150keV < energy < 1500keV - energy > 1500keV Aside from usual hot channels at cable/DSSSD boundaries good hit pattern observed. For > 1500keV events observe flat field in x-plane, focussed in y-plane. Attachments 9-11 - per FEE64 HEC data item rates 268ms/channel - common x and y scales - no conditions - 100MeV < energy < 1000MeV - energy > 1000MeV Note hot HEC channel in aida08 - should be disabled. Attachment 12 - per DSSSD decay and implant rates 262us/channel - common x and y scales Attachment 13 - per DSSSD LEC m_p versus m_n - no conditions Attachment 14 - per DSSSD LEC p strip versus n strip - no conditions Attachments 15-16 - per DSSSD LEC E_p versus E_n - x and y-axes 20keV/channel - LEC energy difference +/- 2000 channels (+/- 11200keV) Attachments 17-18 - per DSSSD p strip versus n strip - HEC-LEC time difference <1s - HEC-LEC time difference <100s Attachment 19 - per DSSSD HEC m_p versus m_n Attachment 20 - per DSSSD HEC p strip versus n strip - no conditions - z_hec=1 => implant stops in DSSSD#1 - z_hec=3 => implant hits DSSSD#1 and DSSSD#2 but does not necessarily stop in DSSSD#2 Attachment 21 - per DSSSD HEC E_p versus E_n - x and y axes 20MeV/channel Attachment 22 - DSSSD#1 HEC E_p versus DSSSD#2 HEC E_p - x and y axes 20MeV/channel - few events stop in DSSSD#2 - most events lower Z and A - fission fragments? Attachment 23 - per DSSSD per pixel HEC-LEC time difference 4.096us/channel - events observed to <<100us Attachment 24 - per DSSSD per pixel HEC-LEC time difference (1s/channel) versus LEC energy (20keV/channel) - alpha events long lived - some evidence of effect of on spill deadtime in implant-decay correlations (cf. S100 and S505) Attachment 25 - per DSSSD implant and decay event p strip - n strip time difference (2us/channel) - wider distribution for implant events as expected due to number of ASIC active channels in implant events - most decay events +/-2us - lower ASIC occupancy for decay events so most events will be from same (or adjacent) clock cycle Encoding: HTML ELCode plain Suppress Email notification

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