Offline analysis of S505 data files R3_150

first WR ts
First timestamp of R3_150 0x16FB3CE72ED53CB6

Epoch converter says ...

GMT: Thursday, June 23, 2022 11:37:31.609 AM
Your time zone: Thursday, June 23, 2022 12:37:31.609 PM GMT+01:00 DST

last WR ts
First timestamp of R3_151 0x16FB3D3042B9E8E6

Epoch converter says ...

GMT: Thursday, June 23, 2022 11:42:45.475 AM
Your time zone: Thursday, June 23, 2022 12:42:45.475 PM GMT+01:00 DST

Analysis of data file R3_150 - attachment 1
 max time averaged deadtime FEE64 #1 (aida02) 18.3%



FEE64 configuration

FEE64   a  
      b    d
        c

         a  b  c  d 
DSSSD#1  3  4  1  2
DSSSD#2  7  8  5  6

n+n Ohmic FEE64s 2, 4, 6, 8

Data analysis assumes

- all LEC ADC data channels with valid ADC offset included (474 of 512 channels)
      LEC calibration ADC offset only

- no clustering

- no multiplex timestamp correction

- no p+n junction side - n+n Ohmic side correlation time gates

- FEE64 *not* DSSSD strip ordering

- hardware - slow comparator setting p+n junction FEE64s 100keV, n+n Ohmic FEE64s 100keV

- LEC energy difference +/-168keV

- HEC energy difference +/- 1.68GeV

- valid LEC events

   DSSSD #1
   p+n junction side multiplicity = 1 and n+n Ohmic side multiplicity = 1
   DSSSD #2
   p+n junction side multiplicity = 1 and n+n Ohmic side multiplicity = 1

   151keV < LEC energy < 1008keV
    to select candidate beta events and veto higher energy events e.g. light ions
    standalone analysis of AIDA data, no downstream veto detector

- valid HEC events
   p+n junction side multiplicity > 0 and n+n Ohmic side multiplicity > 0

  (x,y) strips corresponding to maximum energy
  p+n junction and n+n Ohmic side HEC 

- HEC veto 
   p+n junction side multiplicity > 0 or n+n Ohmic side multiplicity > 0

- per pixel implant-decay correlations

- end of event 
   difference in WR timestamp between successive ADC data items > 2500 *or* difference in first and last WR timestamp of event < 33us


Attachment 2 per FEE64 LEC data rate (Hz) 268ms/channel
Attachment 3 per FEE64 LEC data rate (Hz) 268ms/channel: 150keV < energy < 1500keV
Attachment 22 per FEE64 LEC data rate (Hz) 268ms/channel: energy > 1500keV

- observe high instantaneous rate on spill
- rate dominated by low energy (<1500keV) events
- rate of higher energy events dominated by on spill events i.e. light ions as expected
- significant deadtime on spill for n+n Omic FEE64 aida02, low deadtime off spill
- deadtime low/zero for all other FEE64s on/off spill

Attachment 4 per FEE64 HEC data rate (Hz) 268ms/channel
Attachment 5 per FEE64 HEC data rate (Hz) 268ms/channel: 100MeV < energy < 1000MeV
Attachment 6 per FEE64 HEC data rate (Hz) 268ms/channel: energy > 1000MeV

- all HEC events on spill as expected
- significant deadtime on spill for n+n Ohmic FEE64 aida02, low deadtime off spill
- deadtime low/zero for all other FEE64s on/off spill


Attachment 7 per DSSSD decay and implant rate (Hz) 268ms/channel

Attachment 8 log scale
yellow - FEE64 aida01 LEC data rate (Hz) 268ms/channel
red    - FEE64 aida01 HEC data rate (Hz) 268ms/channel
blue   - DSSSD #1 decay rate (Hz) 268ms/channel
green  - DSSSD #1 implant rate (Hz) 268ms/channel

Attachment 9 log scale
yellow - FEE64 aida02 LEC data rate (Hz) 268ms/channel
red    - FEE64 aida02 HEC data rate (Hz) 268ms/channel
blue   - DSSSD #1 decay rate (Hz) 268ms/channel
green  - DSSSD #1 implant rate (Hz) 268ms/channel

Attachment 10 log scale
yellow - FEE64 aida05 LEC data rate (Hz) 268ms/channel
red    - FEE64 aida05 HEC data rate (Hz) 268ms/channel
blue   - DSSSD #2 decay rate (Hz) 268ms/channel
green  - DSSSD #2 implant rate (Hz) 268ms/channel


Attachment 11 per DSSSD LEC m_p versus m_n 

Attachment 12 per DSSSD LEC x versus y 

Attachment 13 per DSSSD LEC p+n junction versus n+n Ohmic energy - x-axis & y-axis 20keV/channel


Attachment 14 per DSSSD HEC m_p versus m_n 

Attachment 15 per DSSSD HEC x versus y 

Attachment 16 per DSSSD HEC p+n junction versus n+n Ohmic energy - x-axis & y-axis 20MeV/channel

Attachment 17 HEC DSSSD#2 p+n junction versus DSSSD#1 p+n junction energy - x-axis & y-axis 20MeV/channel
 to identify which ions stop in DSSSD#2 (z_loc=2)

Attachment 18 decay & implant dx versus dy 

Attachment 19 LEC DSSSD#2 p+n junction versus DSSSD#1 p+n junction energy - x-axis & y-axis 20keV/channel

Attachment 20 per DSSSD decay & implant dt (2us/channel)

Attachment 21 per DSSSD decay dt (2us/channel) versus p+n junctionj - n+n Ohmic energy difference (20keV/channel)


Summary

- high instantaneous data rates on spill
- significant deadtime FEE64 #2 on spill
   magnitude, structure, position of DSSSD#1 decay rate variations differs from FEE64 #2 deadtime - events merging?
- all other FEE64s OK on/off spill