Analysis data files R4_351-396


Data file R4_351 first WR ts 0x17D7B4C72B0BA9C8
Converting hexadecimal timestamp to decimal: 1718040550378809900
Assuming that this timestamp is in nanoseconds (1 billionth of a second):
GMT: Monday, June 10, 2024 5:29:10.378 PM
Your time zone: Monday, June 10, 2024 6:29:10.378 PM GMT+01:00 DST
Relative: 8 months ago

Data file R4_396 first WR ts 0x17D7BE86408888E8
Converting hexadecimal timestamp to decimal: 1718051266682718500
Assuming that this timestamp is in nanoseconds (1 billionth of a second):
GMT: Monday, June 10, 2024 8:27:46.682 PM
Your time zone: Monday, June 10, 2024 9:27:46.682 PM GMT+01:00 DST
Relative: 8 months ago

Attachments 1-2 - analysis data files R4_351 and R4_396
 max. *time averaged* deadtime FEE64 #7 (aida08) 1.7% and 1.7% respectively
 all other FEE64 deadtimes < 1%





FEE64 configuration

FEE64   a b c 
      g       h
        d e f

         a  b  c  d  e  f  g  h
DSSSD#1 15  3 12  9  1  5  2  4
DSSSD#2 11  7 16 10 14 13  6  8

n+n Ohmic FEE64s 2, 4, 6, 8

Data analysis assumes

- all LEC ADC data channels with valid ADC offset included (1012 of 1024 channels)
      LEC calibration ADC offset only

- no clustering

- no multiplex timestamp correction

- no p+n junction side - n+n Ohmic side correlation time gates

- FEE64 *not* DSSSD strip ordering

- hardware - slow comparator setting p+n junction FEE64s 100keV, n+n Ohmic FEE64s 150keV

- LEC energy difference +/- 11200keV (wide open for first pass analysis)

- HEC energy difference +/- 1.68GeV

- valid LEC events

   p+n junction side multiplicity = 1 and n+n Ohmic side multiplicity = 1

   LEC energy > 151keV
    to select candidate beta  and alpha events - will include light ions
    standalone analysis of AIDA data, no downstream veto detector

- valid HEC events
   p+n junction side multiplicity > 0 and n+n Ohmic side multiplicity > 0

  (x,y) strips corresponding to maximum energy
  p+n junction and n+n Ohmic side HEC 

- HEC veto 
   p+n junction side multiplicity > 0 or n+n Ohmic side multiplicity > 0

- per pixel implant-decay correlations

- end of event 
   difference in WR timestamp between successive ADC data items > 2500 and overall event length < 33us




Number of events observed

 *** scaler # 1 count:  35941696 DSSSD#1 decay events       LEC m_p = 1 and LEC m_n = 1, ADC data > 151.2keV *and* HEC m_p = HEC m_n = 0, ADC data > 151.2MeV
 *** scaler # 2 count:  31960753 DSSSD#2 decay events       LEC m_p = 1 and LEC m_n = 1, ADC data > 151.2keV *and* HEC m_p = HEC m_n = 0, ADC data > 151.2MeV
 *** scaler # 3 count:   1499844 DSSSD#1 implant events     HEC m_p > 0 and HEC m_n > 0, ADC data > 151.2MeV
 *** scaler # 4 count:   1297356 DSSSD#2 implant events     HEC m_p > 0 and HEC m_n > 0, ADC data > 151.2MeV
 *** scaler # 5 count:   5446969 DSSSD#1 other events       HEC m_p > 0 or HEC m_n > 0 *and* LEC m_p > 8 or LEC m_n > 8
 *** scaler # 6 count:  75030747 DSSSD#2 other events       HEC m_p > 0 or HEC m_n > 0 *and* LEC m_p > 8 or LEC m_n > 8

DSSSD#1 implant events
x=m_p=0 ?
y=m_n=0 ?

DSSSD#2 implant events
x=m_p=0 ?
y=m_n=0 ?


Attachments 3-6 - per FEE64 LEC data item rates 268ms/channel - common x and y scales
 - no conditions
 - 150keV < energy < 1500keV
 - energy > 1500keV

Some deadtime observed on spill, none observed off spill. No significant variation in per FEE64 LEC data rates.

Attachments 7-8 - per FEE64 LEC hit patterns
 - 150keV < energy < 1500keV
 - energy > 1500keV

Aside from usual hot channels at cable/DSSSD boundaries good hit pattern observed. For > 1500keV events observe flat field in x-plane, focussed in y-plane.

Attachments 9-11 - per FEE64 HEC data item rates 268ms/channel - common x and y scales
 - no conditions
 - 100MeV < energy < 1000MeV
 - energy > 1000MeV

Note hot HEC channel in aida08 - should be disabled.

Attachment 12 - per DSSSD decay and implant rates 262us/channel - common x and y scales

Attachment 13 - per DSSSD LEC m_p versus m_n 
 - no conditions

Attachment 14 - per DSSSD LEC p strip versus n strip
 - no conditions

Attachments 15-16 - per DSSSD LEC E_p versus E_n - x and y-axes 20keV/channel
 - LEC energy difference +/- 2000 channels (+/- 11200keV)

Attachments 17-18 - per DSSSD p strip versus n strip
 - HEC-LEC time difference <1s
 - HEC-LEC time difference <100s

Attachment 19 -  per DSSSD HEC m_p versus m_n

Attachment 20 - per DSSSD HEC p strip versus n strip
 - no conditions
 - z_hec=1 => implant stops in DSSSD#1
 - z_hec=3 => implant hits DSSSD#1 and DSSSD#2 but does not necessarily stop in DSSSD#2

Attachment 21 - per DSSSD HEC E_p versus E_n - x and y axes 20MeV/channel

Attachment 22 - DSSSD#1 HEC E_p versus DSSSD#2 HEC E_p - x and y axes 20MeV/channel
 - few events stop in DSSSD#2
 - most events lower Z and A - fission fragments?

Attachment 23 - per DSSSD per pixel HEC-LEC time difference 4.096us/channel
 - events observed to <<100us

Attachment 24 - per DSSSD per pixel HEC-LEC time difference (1s/channel) versus LEC energy (20keV/channel)
 - alpha events long lived 
 - some evidence of effect of on spill deadtime in implant-decay correlations (cf. S100 and S505)

Attachment 25 - per DSSSD implant and decay event p strip - n strip time difference (2us/channel)
 - wider distribution for implant events as expected due to number of ASIC active channels in implant events
 - most decay events +/-2us - lower ASIC occupancy for decay events so most events will be from same (or adjacent) clock cycle